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| PD - 96089 IRF7379IPBF HEXFET(R) Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Lead-Free S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 D1 D2 D2 N-Ch VDSS 30V P-Ch -30V 2 7 3 6 4 5 P-CHANNEL MOSFET RDS(on) 0.045 0.090 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Top View SO-8 Absolute Maximum Ratings Parameter VSD ID @ TA = 25C ID @ TA = 70C I DM PD @TA = 25C VGS dv/dt TJ, TSTG Drain-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. N-Channel 30 5.8 4.6 46 2.5 0.02 20 5.0 -55 to + 150 -5.0 P-Channel -30 -4.3 -3.4 -34 Units A W W/C V V/ns C Thermal Resistance Ratings Parameter RJA Maximum Junction-to-Ambient Max. 50 Units C/W www.irf.com 1 07/07/06 IRF7379IPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage Min. Typ. Max. N-Ch 30 -- -- P-Ch -30 -- -- N-Ch -- 0.032 -- P-Ch -- -0.037 -- -- 0.038 0.045 N-Ch -- 0.055 0.075 -- 0.070 0.090 P-Ch -- 0.130 0.180 N-Ch 1.0 -- -- P-Ch -1.0 -- -- N-Ch 5.2 -- -- P-Ch 2.5 -- -- N-Ch -- -- 1.0 P-Ch -- -- -1.0 N-Ch -- -- 25 P-Ch -- -- -25 N-P -- -- 100 N-Ch -- -- 25 P-Ch -- -- 25 N-Ch -- -- 2.9 P-Ch -- -- 2.9 N-Ch -- -- 7.9 P-Ch -- -- 9.0 N-Ch -- 6.8 -- P-Ch -- 11 -- N-Ch -- 21 -- P-Ch -- 17 -- N-Ch -- 22 -- P-Ch -- 25 -- N-Ch -- 7.7 -- P-Ch -- 18 -- N-P -- 4.0 -- N-P -- 6.0 -- N-Ch -- 520 -- P-Ch -- 440 -- N-Ch -- 180 -- P-Ch -- 200 -- N-Ch -- 72 -- P-Ch -- 93 -- Units V V/C V S A Conditions VGS = 0V, ID = 250A VGS = 0V, I D = -250A Reference to 25C, ID = 1mA Reference to 25C, I D = -1mA VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 4.9A VGS = -10V, ID =- 4.3A VGS = -4.5V, ID =- 3.7A VDS = VGS, ID = 250A VDS = VGS, I D = -250A VDS = 15V, ID = 2.4A VDS = -24V, ID = -1.8A VDS = 24 V, VGS = 0V VDS = -24V, VGS = 0V VDS = 24 V, VGS = 0V, TJ = 125C VDS = -24V, VGS = 0V, TJ = 125C VGS = 20V N-Channel ID = 2.4A, VDS = 24V, VGS = 10V P-Channel ID = -1.8A, VDS = -24V, VGS = -10V N-Channel VDD = 15V, I D = 2.4A, RG = 6.0, RD = 6.2 P-Channel VDD = -15V, ID = -1.8A, RG = 6.0, RD = 8.2 nH Between lead, 6mm (0.25in.) from package and center of die contact N-Channel VGS = 0V, V DS = 25V, = 1.0MHz P-Channel VGS = 0V, V DS = -25V, = 1.0MHz V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance I DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductace Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance nC ns pF Source-Drain Ratings and Characteristics Parameter IS I SM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions -- -- 3.1 -- -- -3.1 A -- -- 46 -- -- -34 -- -- 1.0 TJ = 25C, IS = 1.8A, VGS = 0V V -- -- -1.0 TJ = 25C, IS = -1.8A, VGS = 0V -- 47 71 N-Channel ns -- 53 80 TJ = 25C, IF = 2.4A, di/dt = 100A/s -- 56 84 P-Channel nC TJ = 25C, IF = -1.8A, di/dt = -100A/s -- 66 99 Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 10 ) Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. N-Channel ISD 2.4A, di/dt 73A/s, VDD V(BR)DSS, TJ 150C P-Channel ISD -1.8A, di/dt 90A/s, VDD V(BR)DSS, TJ 150C 2 www.irf.com N-Channel IRF7379IPBF VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I , Drain-to-Source Current (A) D 100 I , Drain-to-Source Current (A) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 100 4.5V 10 4.5V 10 1 0.1 1 20s PULSE WIDTH TJ = 25C 10 A 100 VDS , Drain-to-Source Voltage (V) 1 0.1 20s PULSE WIDTH TJ = 150C 1 10 100 A VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 I D , Drain-to-Source Current (A) TJ = 25C TJ = 150C ISD , Reverse Drain Current (A) 10 TJ = 150C TJ = 25C 1 10 4 5 6 7 VDS = 15V 20s PULSE WIDTH 8 9 10 A 0.1 0.0 0.5 1.0 1.5 VGS = 0V 2.0 A 2.5 VGS , Gate-to-Source Voltage (V) VSD , Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7379IPBF 2.0 N-Channel 0.20 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 4.0A R DS (on), Drain-to-Source On Resistance ( ) 0.16 1.5 0.12 1.0 VGS = 4.5V 0.08 0.5 VGS = 10V 0.04 0.0 -60 -40 -20 0 20 40 60 80 VGS = 10V 100 120 140 160 A 0.00 2 4 6 8 10 TJ , Junction Temperature (C) I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current R DS (on), Drain-to-Source On Resistance ( ) 0.08 0.07 0.06 0.05 ID = 5.8A 0.04 0.03 0 4 8 12 16 VGS , Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 4 www.irf.com N-Channel 1000 20 IRF7379IPBF I D = 2.4A VDS = 24V 800 Ciss 600 C oss 400 V GS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 16 C, Capacitance (pF) 12 8 200 Crss 4 0 1 10 100 A 0 0 5 10 FOR TEST CIRCUIT SEE FIGURE 11 15 20 25 A VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 8. Typical Capacitance Vs. Drain-to-Source Voltage Fig 9. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100 10 1 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7379IPBF 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP P-Channel 100 -ID , Drain-to-Source Current (A) 10 -4.5V -I D , Drain-to-Source Current (A) VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP 10 -4.5V 1 0.1 1 20s PULSE WIDTH TJ = 25C A 10 100 1 0.1 20s PULSE WIDTH TJ = 150C 1 10 A 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 11. Typical Output Characteristics Fig 12. Typical Output Characteristics 100 100 -I D , Drain-to-Source Current (A) TJ = 25C TJ = 150C -ISD , Reverse Drain Current (A) 10 TJ = 150C TJ = 25C 1 10 1 4 5 6 7 VDS = -15V 20s PULSE WIDTH 8 9 10 A 0.1 0.0 0.3 0.6 0.9 VGS = 0V 1.2 A 1.5 -VGS , Gate-to-Source Voltage (V) -VSD , Source-to-Drain Voltage (V) Fig 13. Typical Transfer Characteristics Fig 14. Typical Source-Drain Diode Forward Voltage 6 www.irf.com P-Channel R DS (on), Drain-to-Source On Resistance ( ) 0.50 IRF7379IPBF R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 I D = -3.0A 0.40 1.5 0.30 1.0 VGS = -4.5V 0.20 0.5 VGS = -10V 0.10 0.0 -60 -40 -20 0 20 40 60 80 VGS = -10V 100 120 140 160 A 0.00 0 2 4 6 8 10 12 14 TJ , Junction Temperature (C) -ID , Drain Current (A) Fig 15. Normalized On-Resistance Vs. Temperature Fig 16. Typical On-Resistance Vs. Drain Current R DS (on), Drain-to-Source On Resistance ( ) 0.16 0.14 0.12 0.10 ID = -4.3A 0.08 0.06 0 4 8 12 16 -VGS , Gate-to-Source Voltage (V) Fig 17. Typical On-Resistance Vs. Gate Voltage www.irf.com 7 IRF7379IPBF 1000 P-Channel 20 800 -VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd ID = -3.0A VDS = -24V 16 C, Capacitance (pF) 600 Ciss Coss 12 400 8 200 Crss 4 0 1 10 100 A 0 0 5 10 FOR TEST CIRCUIT SEE FIGURE 22 15 20 25 A - -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 18. Typical Capacitance Vs. Drain-to-Source Voltage Fig 19. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100 10 1 t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 www.irf.com IRF7379IPBF SO-8 Package Outline Dimensions are shown in milimeters (inches) 9DH 6 6 i p 9 @ r r C F G DI8C@T HDI H6Y $"! %'' # (' " ! &$ (' '( (%' #(& $&# $AA76TD8 !$AA76TD8 !!'# !## (( (% % $ A A' HDGGDH@U@ST HDI H6Y "$ &$ !$ "" $ ( !$ #' $ "' # !&AA76TD8 %"$AA76TD8 $' %! !$ $ # !& A A' 9 6 ' & % $ 7 % @ $ C !$Ab dA 6 ! " # %Y r r 6 FAA#$ 8 Ab#dA 'YAG & 'YAp 'YAi !$Ab dA 6 867 APPUQSDIU IPU@T) AA9DH@ITDPIDIBAEAUPG@S6I8DIBAQ@SA6TH@A #$H ((# !AA8PIUSPGGDIBA9DH@ITDPI)AHDGGDH@U@S "AA9DH@ITDPITA6S@ATCPXIADIAHDGGDH@U@STAbDI8C@Td #AAPVUGDI@A8PIAPSHTAUPAE@9@8APVUGDI@AHT !66 $AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A $Ab%d %AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A!$Ab d &AAA9DH@ITDPIADTAUC@AG@IBUCAPAAG@69AAPSATPG9@SDIBAUP AAAAA6ATV7TUS6U@ 'YA&!Ab!'d %#%Ab!$$d "YA !&Ab$d 'YA &'Ab&d SO-8 Part Marking Information @Y6HQG@)AUCDTADTA6IADSA& AHPTA@U 96U@A8P9@AXX QA2A9DTBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP ;;;; ) www.irf.com 9 IRF7379IPBF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/2006 10 www.irf.com |
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